Effective-Hamiltonian modeling of external pressures in ferroelectric perovskites

The phase-transition sequence of a ferroelectric perovskite such as BaTiO_3 can be simulated by computing the statistical mechanics of a first-principles derived effective Hamiltonian [Zhong, Vanderbilt and Rabe, Phys. Rev. Lett. 73, 1861 (1994)]. Within this method, the effect of an external pressure (in general, of any external field) can be studied by considering the appropriate "enthalpy" instead of the effective Hamiltonian itself. The legitimacy of this approach relies on two critical assumptions that, to the best of our knowledge, have not been adequately discussed in the literature to date: (i) that the zero-pressure relevant degrees of freedom are still the only relevant degrees of freedom at finite pressures, and (ii) that the truncation of the Taylor expansion of the energy considered in the effective Hamiltonian remains a good approximation at finite pressures. Here we address these issues in detail and present illustrative first-principles results for BaTiO_3. We also discuss how to construct effective Hamiltonians in cases in which these assumptions do not hold.Comment: 5 pages, with 2 postscript figures embedded. Proceedings of "Fundamental Physics of Ferroelectrics, 2002", R. Cohen and T. Egami, eds. (AIP, Melville, New York, 2002). Also available at http://www.physics.rutgers.edu/~dhv/preprints/ji_effp/index.htm

Predicting polarization enhancement in multicomponent ferroelectric superlattices

Ab initio calculations are utilized as an input to develop a simple model of polarization in epitaxial short-period CaTiO3/SrTiO3/BaTiO3 superlattices grown on a SrTiO3 substrate. The model is then combined with a genetic algorithm technique to optimize the arrangement of individual CaTiO3, SrTiO3 and BaTiO3 layers in a superlattice, predicting structures with the highest possible polarization and a low in-plane lattice constant mismatch with the substrate. This modelling procedure can be applied to a wide range of layered perovskite-oxide nanostructures providing guidance for experimental development of nanoelectromechanical devices with substantially improved polar properties.Comment: 4 pages, submitted to PR

Compositional Inversion Symmetry Breaking in Ferroelectric Perovskites

Ternary cubic perovskite compounds of the form A_(1/3)A'_(1/3)A''_(1/3)BO_3 and AB_(1/3)B'_(1/3)B''_(1/3)O_3, in which the differentiated cations form an alternating series of monolayers, are studied using first-principles methods. Such compounds are representative of a possible new class of materials in which ferroelectricity is perturbed by compositional breaking of inversion symmetry. For isovalent substitution on either sublattice, the ferroelectric double-well potential is found to persist, but becomes sufficiently asymmetric that minority domains may no longer survive. The strength of the symmetry breaking is enormously stronger for heterovalent substitution, so that the double-well behavior is completely destroyed. Possible means of tuning between these behaviors may allow for the optimization of resulting materials properties.Comment: 4 pages, two-column style with 3 postscript figures embedded. Uses REVTEX and epsf macros. Also available at http://www.physics.rutgers.edu/~dhv/preprints/index.html#sai_is

Influence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions

The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer, magnetization profiles, Schottky barrier heights, and spin polarization of densities of states on interface structure is studied. With As-termination, an abrupt interface with Fe is favored, while Ga-terminated GaAs favors the formation of an intermixed layer with Fe. The Schottky barrier heights are particularly sensitive to the abruptness of the interface. A significant density of states in the semiconducting gap arises from metal interface states. These spin-dependent interface states lead to a significant minority spin polarization of the density of states at the Fermi level that persists well into the semiconductor, providing a channel for the tunneling of minority spins through the Schottky barrier. These interface-induced gap states and their dependence on atomic structure at the interface are discussed in connection with potential spin-injection applications.Comment: 9 pages, 9 figures, to appear in PR

Comment on "Weyl fermions and the anomalous Hall effect in metallic ferromagnets"

We point out that, contrary to an assertion by Chen, Bergman and Burkov [Phys. Rev. B 88, 125110 (2013)], the non-quantized part of the intrinsic anomalous Hall conductivity can indeed be expressed as a Fermi-surface property even when Weyl points are present in the bandstructure.Comment: Submitted to Physical Review

First-principles study of epitaxial strain in perovskites

Using an extension of a first-principles method developed by King-Smith and Vanderbilt [Phys. Rev. B {\bf 49}, 5828 (1994)], we investigate the effects of in-plane epitaxial strain on the ground-state structure and polarization of eight perovskite oxides: BaTiO$_3$, SrTiO$_3$, CaTiO$_3$, KNbO$_3$, NaNbO$_3$, PbTiO$_3$, PbZrO$_3$, and BaZrO$_3$. In addition, we investigate the effects of a nonzero normal stress. The results are shown to be useful in predicting the structure and polarization of perovskite oxide thin films and superlattices.Comment: 10 page

Spin-dependent electronic structure of transition-metal atomic chains adsorbed on single-wall carbon nanotubes

We present a systematic study of the electronic and magnetic properties of transition-metal (TM) atomic chains adsorbed on the zigzag single-wall carbon nanotubes (SWNTs). We considered the adsorption on the external and internal wall of SWNT and examined the effect of the TM coverage and geometry on the binding energy and the spin polarization at the Fermi level. All those adsorbed chains studied have ferromagnetic ground state, but only their specific types and geometries demonstrated high spin polarization near the Fermi level. Their magnetic moment and binding energy in the ground state display interesting variation with the number of $d-$electrons of the TM atom. We also show that specific chains of transition metal atoms adsorbed on a SWNT can lead to semiconducting properties for the minority spin-bands, but semimetallic for the majority spin-bands. Spin-polarization is maintained even when the underlying SWNT is subjected to high radial strain. Spin-dependent electronic structure becomes discretized when TM atoms are adsorbed on finite segments of SWNTs. Once coupled with non-magnetic metal electrodes, these magnetic needles or nanomagnets can perform as spin-dependent resonant tunnelling devices. The electronic and magnetic properties of these nanomagnets can be engineered depending on the type and decoration of adsorbed TM atom as well as the size and symmetry of the tube. Our study is performed by using first-principles pseudopotential plane wave method within spin-polarized Density Functional Method.Comment: 8 pages, 6 figures, without proof readin

Nonlinear optics of III-V semiconductors in the terahertz regime: an ab-initio study

We compute from first principles the infrared dispersion of the nonlinear susceptibility $\chi^{(2)}$ in zincblende semiconductors. At terahertz frequencies the nonlinear susceptibility depends not only on the purely electronic response $\chi^{(2)}_{\infty}$, but also on three other parameters $C_1$, $C_2$ and $C_3$ describing the contributions from ionic motion. They relate to the TO Raman polarizability, the second-order displacement-induced dielectric polarization, and the third-order lattice potential. Contrary to previous theory, we find that mechanical anharmonicity ($C_3$) dominates over electrical anharmonicity ($C_2$), which is consistent with recent experiments on GaAs. We predict that the sharp minimum in the intensity of second-harmonic generation recently observed for GaAs between $\omega_{\rm TO}/2$ and $\omega_{\rm TO}$ does not occur for several other III-V compounds.Comment: 9 pages, 3 figures; updated bibliograph